Error correcting code poisoning for memory devices and associated methods and systems

ABSTRACT

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to poison data based on an indication provided by a host device coupled with the memory devices. The indication may include which one or more bits to poison (invert) at which stages of performing write or read operations. In some embodiments, the memory device may invert one or more bits according to the indication and then correct one or more errors associated with inverting the one or more bit to verify its on-die ECC functionality. In some embodiments, the memory device may provide the host device with poisoned data including one or more bits inverted according to the indication such that the host device may test system-level ECC functionality using the poisoned data.

TECHNICAL FIELD

The present disclosure generally relates to memory devices, and moreparticularly relates to error correcting code poisoning for memorydevices and associated methods and systems.

BACKGROUND

Memory devices are widely used to store information related to variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Memory devices are frequentlyprovided as internal, semiconductor, integrated circuits and/or externalremovable devices in computers or other electronic devices. There aremany different types of memory, including volatile and nonvolatilememory. Volatile memory, including random-access memory (RAM), staticrandom-access memory (SRAM), dynamic random-access memory (DRAM), andsynchronous dynamic random-access memory (SDRAM), among others, requirea source of applied power to maintain its data. Nonvolatile memory, bycontrast, can retain its stored data even when not externally powered.Nonvolatile memory is available in a wide variety of technologies,including flash memory (e.g., NAND and NOR), phase change memory (PCM),ferroelectric random-access memory (FeRAM), resistive random-accessmemory (RRAM), and magnetic random-access memory (MRAM), among others.Improving memory devices, generally, may include increasing memory celldensity, increasing read/write speeds or otherwise reducing operationallatency, increasing reliability, increasing data retention, reducingpower consumption, or reducing manufacturing costs, among other metrics.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription given below and from the accompanying drawings of variousembodiments of the disclosure. The components in the drawings are notnecessarily to scale. Instead, emphasis is placed on illustratingclearly the principles of the present technology.

FIG. 1 is a block diagram schematically illustrating a memory devicethat supports embodiments of the present technology.

FIG. 2A through 2D are block diagrams schematically illustrating amemory device in accordance with embodiments of the present technology.

FIG. 3 is a block diagram of a system having a memory device configuredin accordance with embodiments of the present technology.

FIGS. 4 and 5 are flowcharts illustrating methods of operating a memorydevice in accordance with embodiments of the present technology.

DETAILED DESCRIPTION

Methods, systems, and apparatuses for memory devices (e.g., DRAM) aredisclosed, which provide for error correcting code poisoning. As memorycells scale to increase memory densities and storage capacities ofmemory devices, meeting various reliability criteria for the memorydevices becomes ever more challenging. Error checking and correctingfunctions utilizing error correcting code (ECC) may help to circumventcertain reliability issues. In some embodiments, memory devices includean ECC circuit (which may be referred to as an ECC engine, module,block, or the like). For example, the ECC circuit included in the memorydevice (“on-die ECC circuit”) may detect and correct at least one error(e.g., a valid logic state of “1” erroneously flipped to an invalidlogic state of “0” or vice versa) in data. Additionally, oralternatively, the ECC circuit may detect two or more errors in thedata. In some embodiments, a host device (e.g., a memory controller)coupled with the memory devices includes an ECC circuit external to thememory devices (e.g., system-level ECC functions). Being able to testthe on-die ECC circuit and/or the system-level ECC functions would bedesirable to confirm proper operations of the ECC circuits.

In some embodiments, on-die ECC circuits of the memory devices may beconfigured to correct at least one error to improve the data integritywithin the memory devices. By way of example, the on-die ECC circuitsmay utilize data including a first quantity of bits (e.g., 128 databits) to compute (calculate) an ECC parity code including a secondquantity of bits (e.g., 8 bits), which may be referred to as ECC checkbits or ECC parity bits. A combination of the first and secondquantities of bits (e.g., 136 bits including the 128 data bits plus the8 ECC check bits) may be referred to as a code word including a thirdquantity of bits (e.g., 136 bits).

During write operations, the memory device, upon receiving a writecommand providing the data and an address within a memory array of thememory device, may compute a set of ECC check bits (e.g., 8 bits, afirst group of check bits) using the data (e.g., 128 bits of data) andthen writes the code word (e.g., 136 bits including the data and the ECCcheck bits) to the address within the memory array. During readoperations, the memory device may attempt to detect and/or correct atleast one error before transmitting the data (e.g., 128 bits of data) tothe memory controller. In some embodiments, the memory device reads thecode word from the address, and compute another set of ECC check bits(e.g., 8 bits, a second group of check bits) using the data read fromthe address. Subsequently, the memory device may compare the first groupof ECC check bits read from the address (which has been written to theaddress in response to the write command) with the second group of ECCcheck bits computed from the data read from the address such that thememory device can detect and/or correct at least one error in the data.

The on-die ECC circuits may be tested under manufacturing environmentsin various ways. For example, data may be written to a memory array withthe on-die ECC circuit disabled (e.g., via test modes), and then readfrom the memory array with the ECC circuit enabled, or vice versa. Inother examples, with the on-die ECC circuit enabled, valid data may bewritten to the memory array and then read back. Subsequently, poisoneddata (e.g., one or more data bits intentionally inverted or flipped, oneor more errors injected to the data) may be written and then read backto validate the on-die ECC circuit functionality. Once the memorydevices are implemented in a system, however, accessing test modesand/or manipulating the data by injecting errors may not be available tothe system (e.g., a host device, a memory controller) to test the on-dieECC functionality. Additionally, or alternatively, being able to providepoisoned data to the host device may be desirable to test thesystem-level ECC functionality.

Several embodiments of the present technology are directed to poisoningone or more bits of data (e.g., inverting, flipping, modifying,corrupting, or the like) within a memory device included in a system.Such poisoning of data may facilitate confirming functionality of theon-die ECC circuit and/or providing (outputting) poisoned data fortesting the system-level ECC functionality. In this regard, the presenttechnology allows a host device of the system, in conjunction with thememory device coupled therewith, to control which bits to invert (topoison) during write or read operations. In some embodiments, the hostdevice may access one or more mode registers of the memory device toindicate (program) which bit or bits to poison while executing an accesscommand (e.g., a write command, a read command). Additionally, oralternatively, the host device may transmit one or more commandsconfigured to program the registers (e.g., multi-purpose commands(MPCs), mode register write (MRW) commands) to provide such indicationsto the memory device.

A memory device that supports embodiments of the present technology isdescribed with reference to FIG. 1. More detailed descriptions of amemory device that supports embodiments of the present technology areprovided with reference to FIGS. 2A through 2D. A memory systemincluding a memory device in accordance with embodiments of the presenttechnology is described with reference to FIG. 3. Methods of operatingthe memory device in accordance with embodiments of the presenttechnology is described with reference to FIGS. 4 and 5.

FIG. 1 is a block diagram schematically illustrating a memory device 100in accordance with embodiments of the present technology. The memorydevice 100 may include an array of memory cells, such as memory array150. The memory array 150 may include a plurality of banks (e.g., banks0-15 in the example of FIG. 1), and each bank may include a plurality ofword lines (WL), a plurality of bit lines (BL), and a plurality ofmemory cells (e.g., m×n memory cells) arranged at intersections of theword lines (e.g., m word lines, which may also be referred to as rows)and the bit lines (e.g., n bit lines, which may also be referred to ascolumns). Each word line of the plurality may be coupled with acorresponding word line driver (WL driver) configured to control avoltage of the word line during memory operations.

Memory cells can include any one of a number of different memory mediatypes, including capacitive, phase change, magnetoresistive,ferroelectric, or the like. In some embodiments, a portion of the memoryarray 150 may be configured to store ECC parity bits (ECC check bits).The selection of a word line WL may be performed by a row decoder 140,and the selection of a bit line BL may be performed by a column decoder145. Sense amplifiers (SAMP) may be provided for corresponding bit linesBL and connected to at least one respective local I/O line pair(LIOT/B), which may in turn be coupled to at least one respective mainI/O line pair (MIOT/B), via transfer gates (TG), which can function asswitches. The memory array 150 may also include plate lines andcorresponding circuitry for managing their operation.

The memory device 100 may employ a plurality of external terminals thatinclude command and address terminals coupled to a command bus and anaddress bus to receive command signals CMD and address signals ADDR,respectively. The memory device may further include a chip selectterminal to receive a chip select signal CS, clock terminals to receiveclock signals CK and CKF, data clock terminals to receive data clocksignals WCK and WCKF, data terminals DQ, RDQS, DBI (for data businversion function), and DMI (for data mask inversion function), powersupply terminals VDD, VSS, and VDDQ.

The command terminals and address terminals may be supplied with anaddress signal and a bank address signal from outside. The addresssignal and the bank address signal supplied to the address terminals canbe transferred, via a command/address input circuit 105, to an addressdecoder 110. The address decoder 110 can receive the address signals andsupply a decoded row address signal (XADD) to the row decoder 140 (whichmay be referred to as a row driver), and a decoded column address signal(YADD) to the column decoder 145 (which may be referred to as a columndriver). The address decoder 110 can also receive the bank addressportion of the ADDR input and supply the decoded bank address signal(BADD) and supply the bank address signal to both the row decoder 140and the column decoder 145.

The command and address terminals may be supplied with command signalsCMD, address signals ADDR, and chip select signals CS, from a memorycontroller. The command signals may represent various memory commandsfrom the memory controller (e.g., refresh commands, activate commands,precharge commands, access commands, which can include read commands andwrite commands). The select signal CS may be used to select the memorydevice 100 to respond to commands and addresses provided to the commandand address terminals. When an active CS signal is provided to thememory device 100, the commands and addresses can be decoded and memoryoperations can be performed. The command signals CMD may be provided asinternal command signals ICMD to a command decoder 115 via thecommand/address input circuit 105.

The command decoder 115 may include circuits to decode the internalcommand signals ICMD to generate various internal signals and commandsfor performing memory operations, for example, a row command signal toselect a word line and a column command signal to select a bit line.Other examples of memory operations that the memory device 100 mayperform based on decoding the internal command signals ICMD includes arefresh command (e.g., re-establishing full charges stored in individualmemory cells of the memory array 150), an activate command (e.g.,activating a row in a particular bank, in some cases for subsequentaccess operations), or a precharge command (e.g., deactivating theactivated row in the particular bank). The internal command signals canalso include output and input activation commands, such as clockedcommand CMDCK (not shown in FIG. 1).

The command decoder 115, in some embodiments, may further include one ormore registers 118 for tracking various counts and/or values (e.g.,counts of refresh commands received by the memory device 100 orself-refresh operations performed by the memory device 100) and/or forstoring various operating conditions for the memory device 100 toperform certain functions, features, and modes (or test modes). As such,in some embodiments, the registers 118 (or a subset of the registers118) may be referred to as mode registers. Additionally, oralternatively, the memory device 100 may include registers 118 as aseparate component out of the command decoder 115. In some embodiments,the registers 118 may include multi-purpose registers (MPRs) configuredto write and/or read specialized data to and/or from the memory device100.

When a read command is issued to a bank with an open row and a columnaddress is timely supplied as part of the read command, read data can beread from memory cells in the memory array 150 designated by the rowaddress (which may have been provided as part of the activate commandidentifying the open row) and column address. The read command may bereceived by the command decoder 115, which can provide internal commandsto input/output circuit 160 so that read data can be output from thedata terminals DQ, RDQS, DBI, and DMI via read/write amplifiers 155 andthe input/output circuit 160 according to the RDQS clock signals. Theread data may be provided at a time defined by read latency informationRL that can be programmed in the memory device 100, for example, in amode register (e.g., the register 118). The read latency information RLcan be defined in terms of clock cycles of the CK clock signal. Forexample, the read latency information RL can be a number of clock cyclesof the CK signal after the read command is received by the memory device100 when the associated read data is provided.

When a write command is issued to a bank with an open row and a columnaddress is timely supplied as part of the write command, write data canbe supplied to the data terminals DQ, DBI, and DMI according to the WCKand WCKF clock signals. The write command may be received by the commanddecoder 115, which can provide internal commands to the input/outputcircuit 160 so that the write data can be received by data receivers inthe input/output circuit 160, and supplied via the input/output circuit160 and the read/write amplifiers 155 to the memory array 150. The writedata may be written in the memory cell designated by the row address andthe column address. The write data may be provided to the data terminalsat a time that is defined by write latency WL information. The writelatency WL information can be programmed in the memory device 100, forexample, in the mode register (e.g., register 118). The write latency WLinformation can be defined in terms of clock cycles of the CK clocksignal. For example, the write latency information WL can be a number ofclock cycles of the CK signal after the write command is received by thememory device 100 when the associated write data is received.

The power supply terminals may be supplied with power supply potentialsVDD and VSS. These power supply potentials VDD and VSS can be suppliedto an internal voltage generator circuit 170. The internal voltagegenerator circuit 170 can generate various internal potentials VPP, VOD,VARY, VPERI, and the like based on the power supply potentials VDD andVSS. The internal potential VPP can be used in the row decoder 140, theinternal potentials VOD and VARY can be used in the sense amplifiersincluded in the memory array 150, and the internal potential VPERI canbe used in many other circuit blocks.

The power supply terminal may also be supplied with power supplypotential VDDQ. The power supply potential VDDQ can be supplied to theinput/output circuit 160 together with the power supply potential VSS.The power supply potential VDDQ can be the same potential as the powersupply potential VDD in an embodiment of the present technology. Thepower supply potential VDDQ can be a different potential from the powersupply potential VDD in another embodiment of the present technology.However, the dedicated power supply potential VDDQ can be used for theinput/output circuit 160 so that power supply noise generated by theinput/output circuit 160 does not propagate to the other circuit blocks.

The clock terminals and data clock terminals may be supplied withexternal clock signals and complementary external clock signals. Theexternal clock signals CK, CKF, WCK, WCKF can be supplied to a clockinput circuit 120. The CK and CKF signals can be complementary, and theWCK and WCKF signals can also be complementary. Complementary clocksignals can have opposite clock levels and transition between theopposite clock levels at the same time. For example, when a clock signalis at a low clock level a complementary clock signal is at a high level,and when the clock signal is at a high clock level the complementaryclock signal is at a low clock level. Moreover, when the clock signaltransitions from the low clock level to the high clock level thecomplementary clock signal transitions from the high clock level to thelow clock level, and when the clock signal transitions from the highclock level to the low clock level the complementary clock signaltransitions from the low clock level to the high clock level.

Input buffers included in the clock input circuit 120 can receive theexternal clock signals. For example, when enabled by a CKE signal fromthe command decoder 115, an input buffer can receive the CK and CKFsignals and the WCK and WCKF signals. The clock input circuit 120 canreceive the external clock signals to generate internal clock signalsICLK. The internal clock signals ICLK can be supplied to an internalclock circuit 130. The internal clock circuit 130 can provide variousphase and frequency controlled internal clock signal based on thereceived internal clock signals ICLK and a clock enable signal CKE fromthe command decoder 115.

For example, the internal clock circuit 130 can include a clock path(not shown in FIG. 1) that receives the internal clock signal ICLK andprovides various clock signals to the command decoder 115. The internalclock circuit 130 can further provide input/output (IO) clock signals.The IO clock signals can be supplied to the input/output circuit 160 andcan be used as a timing signal for determining an output timing of readdata and the input timing of write data. The IO clock signals can beprovided at multiple clock frequencies so that data can be output fromand input to the memory device 100 at different data rates. A higherclock frequency may be desirable when high memory speed is desired. Alower clock frequency may be desirable when lower power consumption isdesired. The internal clock signals ICLK can also be supplied to atiming generator 135 and thus various internal clock signals can begenerated.

The memory device 100 can be connected to any one of a number ofelectronic devices capable of utilizing memory for the temporary orpersistent storage of information, or a component thereof. For example,a host device of memory device 100 may be a computing device such as adesktop or portable computer, a server, a hand-held device (e.g., amobile phone, a tablet, a digital reader, a digital media player), orsome component thereof (e.g., a central processing unit, a co-processor,a dedicated memory controller, etc.). The host device may be anetworking device (e.g., a switch, a router, etc.) or a recorder ofdigital images, audio and/or video, a vehicle, an appliance, a toy, orany one of a number of other products. In one embodiment, the hostdevice may be connected directly to memory device 100, although in otherembodiments, the host device may be indirectly connected to memorydevice (e.g., over a networked connection or through intermediarydevices).

In some embodiments, the memory device 100 includes an on-die ECCcircuit (not shown). During write operations, the on-die ECC circuit cancompute a first group of ECC check bits utilizing data (e.g., externaldata) provided to the memory device 100 to generate a code wordincluding the data and the first group of ECC check bits. The memorydevice 100, then writes the code word to the memory array 150 tocomplete the write operations. During read operations, the on-die ECCcircuit can read the code word to compute a second group of ECC checkbits utilizing the data (e.g., external data) read from the memory array150 such that the on-die ECC circuit can compare the first set of ECCcheck bits with the second set of ECC check bits. In this manner, theon-die ECC circuit may detect and/or correct one or more errors in thedata read from the memory array 150.

In some embodiments, the memory device 100 may receive a commanddirected to a first data set from a host device coupled with the memorydevice 100. The first data set may refer to external data that the hostprovides (if the command corresponds to a write command) or the externaldata written in the memory array 150 (if the command corresponds to aread command). The memory device 100 may generate a second data set fromthe first data set, where the second data set includes one or more bitsinverted (e.g., corrupted, poisoned) corresponding to one or more bitlocations that the host device has indicated to the memory device 100(e.g., via multi-purpose commands, MRW commands, or any command whichwrites the registers 118 of the memory device 100). The second data setmay refer to the code word generated based on the external data (if thecommand corresponds to a write command) or the code word read from thememory array (if the command corresponds to the read command).Subsequently, the memory device 100, in conjunction with the on-die ECCcircuit, may detect one or more errors based on the one or more bitsinverted in the second data set. Subsequently, the memory device 100, inconjunction with the on-die ECC circuit, may correct the one or moreerrors, thereby generating the first data set with the poison removed,and transmit the first data set to the host device. In this manner, thehost device may test the on-die ECC circuit to validate (confirm) itsfunctionality, by controlling which bits to poison during writeoperations or read operations, and receiving the data without the poisonfrom the memory device 100.

FIG. 2A is a block diagram 201 schematically illustrating a memorydevice 205 (which may be an example of or include aspects of the memorydevice 100) in accordance with embodiments of the present technology.The diagram 201 depicts a host device 270 (e.g., a memory controller)coupled with the memory device 205. The memory device 205 may includeperipheral circuitry 215 coupled with a memory array 210 (which may bean example of or include aspects of the memory array 150), a register220 (which may be an example of or include aspects of the register 118),an ECC circuit 225, a command decoder 230 (which may be an example of orinclude aspects of the command decoder 115), an I/O circuit 235 (whichmay be an example of or include aspects of the input/output circuit160), among others.

The diagram 201 further illustrates various channels (buses, paths) thatcarry different signals (e.g., command signals, data signals). Forexample, the diagram 201 depicts command/address bus 240 (which mayinclude aspects of CMD, ADDR, and CS described with reference to FIG.1), through which the host device 270 may transmit various commands(e.g., access commands, multi-purpose commands, MRW commands) to thememory device 205. In addition, the host device 270 may transmit and/orreceive data through input/output (I/O) bus 245 (which may includeaspects of the data terminals DQ and data clock terminals described withreference to FIG. 1). The diagram 201 illustrates, for write operations,a data path 250 before the ECC circuit 225 and a data path 255 after theECC circuit 225. Further, the diagram 201 illustrates, for readoperations, a data path 260 before the ECC circuit 225 and a data path265 after the ECC circuit 225.

The register 220 may be configured to include one or more bit locationsbased on an indication from the host device 270. In this regard, thehost device 270 may predetermine the one or more bit locations andaccess the memory device 205 to program the register 220 such that thehost device 270 can test functionality of the ECC circuit 225 or canhave the memory device 205 to provide (output) poisoned data to the hostdevice to test system-level ECC functionality. The indication from thehost device 270 may include stages of operations where the poisoning mayoccur—e.g., during write operations before or after the ECC circuit 225,during read operations before or after the ECC circuit 225. Although theblock diagram 201 depicts the register 220 as a single block, theregister 220 may include multiple registers (e.g., mode registers,multi-purpose registers).

The host device 270 may provide the indication to the memory device 205by transmitting one or more commands to program the register 220 (e.g.,multi-purpose commands, MRW commands). As such, the command decoder 230may be configured to determine the one or more bit locations (and thestages of operation where the poisoning to occur) predetermined by thehost device 270 based on the one or more multi-purpose commands (and/orone or more MRW commands) transmitted from the host device via thecommand/address bus 240. In some embodiments, the host device 270 mayprovide the indication to the memory device 205 by programming theregister 220, as well as transmitting one or more multi-purpose commands(and/or one or more MRW commands).

The ECC circuit 225 may be configured, during write operations, tocompute a first group of ECC check bits utilizing data (e.g., externaldata) provided to the memory device 205 to generate a code wordincluding the data and the first group of ECC check bits. During readoperations, the ECC circuit 225 can read the code word from the memoryarray 210 to compute a second group of ECC check bits utilizing the data(e.g., external data) read from the memory array 210 such that the ECCcircuit 225 can compare the first set of ECC check bits with the secondset of ECC check bits. In this manner, the on-die ECC circuit may detectand/or correct one or more errors in the data read from the memory array210.

In some cases, the host device 270 can test the memory device 205 toconfirm (validate) the on-die ECC functionality through a write commandfollowed by a read command. For example, the host device 270 mayindicate the memory device 205 one or more bit locations to invert(poison, corrupt) during write operations. As described above, the hostdevice 270 may access the register 220 (e.g., through the peripheralcircuitry 215) to program one or more bit locations to invert duringwrite operations, prior to transmitting the write command. In someembodiments, the host device 270 may transmit one or more multi-purposecommands (and/or one or more MRW commands) to indicate the one or morebit locations before transmitting the write command. In this manner, thehost device 270 can control (designate) memory device 205 as to whichbits to invert during the write operations that the memory device 205would perform, in response to receiving the write command that providesdata (external data) and an address of the memory array 210 to write thedata.

In some embodiments, the peripheral circuitry 215 may receive a writecommand (e.g., through the command/address bus 240) directed to externaldata (e.g., a first data set, 128-bit external data through the I/O bus245) from the host device 270. The peripheral circuitry 215 may, inconjunction with the I/O circuit 235, bring the external data on thedata path 250. The ECC circuit 225 may calculate a first group of ECCcheck bits using the external data to generate a code word including theexternal data and the first group of ECC check bits. The peripheralcircuitry 215 can invert (poison, corrupt) one or more bits of the codeword corresponding to the one or more bit locations that have beenindicated to the memory device 205 by the host device 270. In thismanner, the peripheral circuitry 215 may “poison” the code word (e.g.,generating a second data set including one or more bits inverted) inaccordance with the indication provided by the host device 270. Thediagram 201 illustrates the poisoning with an arrow 275 on the data path255. As a result of the poisoning, the data path 255 carries the“poisoned” code word such that the peripheral circuitry 215 can writethe “poisoned” code word to the address of the memory array 210.

Subsequently, the host device 270 may transmit to the memory device 205a read command including the address of the memory array 210. Theperipheral circuitry 215 may read the “poisoned” code word from thememory array 210. As a result of reading the “poisoned” code word, thedata path 260 provides the “poisoned” code word to the ECC circuit 225.The peripheral circuitry 215, in conjunction with the ECC circuit 225,may detect one or more errors in the “poisoned” code word (e.g., thesecond data set including one or more bits inverted). In someembodiments, the ECC circuit 225 may compute a second group of ECC checkbits using the code word read from the memory array 210 (e.g., externaldata portion of the code word) and compare the second group of ECC checkbits with the first ECC check bits of the code word. The peripheralcircuitry 215, in conjunction with the ECC circuit 225, may correct theone or more errors from the “poisoned” code word. In this manner, theperipheral circuitry 215 can generate the external data from the“poisoned” code word read from the memory array 210. As a result ofcorrecting the one or more errors from the “poisoned” code word, thedata path 265 may provide the I/O circuit 235 with the external datathat the host device 270 has provided with the write command, despitethe poisoning of the external data—e.g., the data transmitted to thehost device 270 via the data path 265 includes bits that match the datareceived from the host device 270 via the data path 250. Thereafter, theperipheral circuitry 215 can transmit the external data back to the hostdevice 270 through the I/O bus 245. In this manner, the host device 270can confirm (validate, verify) the on-die ECC functionality.

FIG. 2B is a block diagram 202 schematically illustrating the memorydevice 205. The diagram 202 describes that the host device 270 can testthe memory device 205 to confirm (validate) the on-die ECC functionalitythrough a read command. As described herein, the host device 270 mayhave indicated the memory device 205 one or more bit locations to invert(poison, corrupt) during read operations—e.g., by programming theregister 220, by transmitting MPCs (and/or MRW commands) to the memorydevice 205, or both. As such, the host device 270 can control(designate) memory device 205 as to which bits to invert (poison,corrupt) during read operations that the memory device 205 wouldperform, in response to receiving the read command that reads data froman address of the memory array 210.

In some embodiments, the peripheral circuitry 215 may receive a readcommand (e.g., through the command/address bus 240) directed to data(e.g., a first data set, 128-bit data) written in an address of thememory array 210. In this regard, the host device 270 may have written acode word associated with the data to the address—e.g., the code wordincluding the data and a first group of ECC check bits calculated usingthe data. As such, the peripheral circuitry 215 may read the code wordfrom the address, and invert (poison, corrupt) one or more bits of thecode word read from the memory array 210 (e.g., one or more bits of thedata read from the memory array 210), where the one or more bitscorresponds to the one or more bit locations that have been indicated tothe memory device 205 by the host device 270. In this manner, theperipheral circuitry 215 may “poison” the code word (e.g., generating asecond data set including one or more bits inverted) in accordance withthe indication provided by the host device 270. The diagram 202illustrates the poisoning with an arrow 275 denoted on the data path260. As a result of the poisoning, the data path 260 carries the“poisoned” code word such that the ECC circuit 225 receives the“poisoned” code word.

The ECC circuit 225 may calculate a second group of ECC check bits usingthe “poisoned” code word (e.g., using the data including one or morebits inverted). Further, the ECC circuit 225 may compare the first groupof ECC check bits with the second group of ECC check bits. In thismanner, the ECC circuit 225 may detect one or more errors in the“poisoned” code word, and correct the one or more errors from the“poisoned” code word. As a result of correcting the one or more errorsfrom the “poisoned” code word, the data path 265 may provide the I/Ocircuit 235 with the data written in the memory array 210, despite thepoisoning of the data read from the memory array 210. Thereafter, theperipheral circuitry 215 can transmit the data to the host device 270through the I/O bus 245. In this manner, the host device 270 can confirm(validate, verify) the on-die ECC functionality.

FIG. 2C is a block diagram 203 schematically illustrating the memorydevice 205. The diagram 203 describes that the host device 270 may causethe memory device 205 to poison external data during write operationssuch that the host device 270 may receive the poisoned external datafrom the memory device 205. In this manner, the host device 270 may test(confirm, validate) the system-level ECC functionality using thepoisoned data received from the memory device 205. As described herein,the host device 270 may have indicated the memory device 205 one or morebit locations to invert (poison, corrupt) during the writeoperations—e.g., by programming the register 220, by transmitting MPCs(and/or MRW commands) to the memory device 205, or both. As such, thehost device 270 can control (designate) memory device 205 as to whichbits to invert during the write operations that the memory device 205would perform, in response to receiving the write command that providesexternal data and an address of the memory array 210 to write theexternal data.

In some embodiments, the peripheral circuitry 215 may receive a writecommand (e.g., through the command/address bus 240) directed to externaldata (e.g., a first data set, 128-bit external data through the I/O bus245) from the host device 270. The peripheral circuitry 215 may, inconjunction with the I/O circuit 235, bring the first data set on to thedata path 250. The peripheral circuitry 215 can invert one or more bitsof the external data corresponding to the one or more bit locations thathave been indicated to the memory device 205 by the host device 270. Inthis manner, the peripheral circuitry 215 may “poison” the external datain accordance with the indication provided by the host device 270. Thediagram 203 illustrates the poisoning with an arrow 275 on the data path250. As a result of the poisoning, the data path 250 provides the“poisoned” external data to the ECC circuit 225. The ECC circuit 225 maycalculate a first group of ECC check bits using the “poisoned” externaldata to generate a code word including the “poisoned” external data andthe first group of ECC check bits. The peripheral circuitry 215 maywrite the code word to the address of the memory array 210, where theaddress is included in the write command.

Thereafter, the host device 270 may transmit to the memory device 205 aread command including the address of the memory array 210. Theperipheral circuitry 215 may read the code word from the memory array210. As a result of reading the code word, the data path 260 providesthe ECC circuit 225 with the code word that includes the “poisoned”external data and the first group of ECC check bits. The ECC circuit 225may calculate a second group of ECC check bits using the “poisoned”external data read from the memory array 210. Further, the ECC circuit225 may compare the first group of ECC check bits read from the memoryarray 210 with the second group of ECC check bits. As both the first andsecond groups of ECC check bits are computed from the “poisoned”external data, the ECC circuit 225 may not detect any error from the“poisoned” external data read from the memory array 210. As such, thedata path 265 may provide the “poisoned” external data to the I/Ocircuit 235. The peripheral circuitry 215 can transmit the “poisoned”external data to the host device 270 through the I/O bus 245. In thismanner, the host device 270 can received the “poisoned” data from thememory device 205 such that the host device 270 can confirm (validate,verify) the system-level ECC functionalities using the “poisoned” data.

FIG. 2D is a block diagram 204 schematically illustrating the memorydevice 205. The diagram 204 describes that the host device 270 may causethe memory device 205 to poison data during read operations such thatthe host device 270 may receive the poisoned data from the memory device205. In this manner, the host device 270 may test (confirm, validate)the system-level ECC functionality using the poisoned data received fromthe memory device 205. As described herein, the host device 270 may haveindicated the memory device 205 one or more bit locations to invert(poison, corrupt) during the read operations—e.g., by programming theregister 220, by transmitting MPCs (and/or MRW commands) to the memorydevice 205, or both. As such, the host device 270 can control(designate) memory device 205 as to which bits to invert during the readoperations that the memory device 205 would perform, in response toreceiving the read command providing an address of the memory array 210.

In some embodiments, the peripheral circuitry 215 may receive a readcommand (e.g., through the command/address bus 240) directed to the data(e.g., a first data set, 128-bit data) written to an address of thememory array 210. In this regard, the host device 270 may have written acode word associated with the data to the address—e.g., the code wordincluding the data and a first group of ECC check bits calculated usingthe data. The peripheral circuitry 215 may bring the data out to thedata path 265 after the ECC circuit 225 checks for errors in the codeword read from the address—e.g., calculating a second group of ECC checkbits using the data read from the memory array 210, comparing the firstand second groups of ECC check bits. As both the first and second groupsof ECC check bits are calculated based on the data, the ECC circuit 225may not detect any error from the code word read from the memory array210.

The peripheral circuitry 215 can invert one or more bits of the datacorresponding to the one or more bit locations that have been indicatedto the memory device 205 by the host device 270. In this manner, theperipheral circuitry 215 may “poison” the data in accordance with theindication provided by the host device 270, prior to transmitting thedata to the host device 270. The diagram 204 illustrates the poisoningwith an arrow 275 on the data path 265. As a result of the poisoning,the data path 265 provides the “poisoned” data to the I/O circuit 235.The peripheral circuitry 215 can transmit the “poisoned” data to thehost device 270 through the I/O bus 245. In this manner, the host device270 can received the “poisoned” data from the memory device 205 suchthat the host device 270 can confirm (validate, verify) the system-levelECC functionalities using the “poisoned” data.

FIG. 3 is a block diagram of a system 301 having a memory device 300configured in accordance with embodiments of the present technology. Thememory device 300 may be an example of or include aspects of the memorydevice described with reference to FIGS. 1 and 2A through 2D. As shown,the memory device 300 includes a main memory 302 (e.g., DRAM, NANDflash, NOR flash, FeRAM, PCM, etc.), a register 315, and controlcircuitry 306 operably coupled to a host device 308 (e.g., an upstreamcentral processor (CPU), a memory controller). The register 315 may bean example of or include aspects of the registers 118 and/or theregister 220. The control circuitry 306 may include aspects of variouscomponents described with reference to FIGS. 1 and 2A through 2D. Forexample, the control circuitry 306 may include aspects of thecommand/address input circuit 105, the address decoder 110, the commanddecoder 115 and/or 230, the ECC circuit 225, the peripheral circuitry215, among others.

The main memory 302 includes a plurality of memory units 320, which eachinclude a plurality of memory cells. The memory units 320 can beindividual memory dies, memory planes in a single memory die, a stack ofmemory dies vertically connected with through-silicon vias (TSVs), orthe like. For example, in one embodiment, each of the memory units 320can be formed from a semiconductor die and arranged with other memoryunit dies in a single device package. In other embodiments, multiplememory units 320 can be co-located on a single die and/or distributedacross multiple device packages. The memory units 320 may, in someembodiments, also be sub-divided into memory regions 328 (e.g., banks,ranks, channels, blocks, pages, etc.).

The memory cells can include, for example, floating gate, charge trap,phase change, capacitive, ferroelectric, magnetoresistive, and/or othersuitable storage elements configured to store data persistently orsemi-persistently. The main memory 302 and/or the individual memoryunits 320 can also include other circuit components, such asmultiplexers, decoders, buffers, read/write drivers, address registers,data out/data in registers, etc., for accessing and/or programming(e.g., writing) the memory cells and other function, such as forprocessing information and/or communicating with the control circuitry306 or the host device 308. Although shown in the illustratedembodiments with a certain number of memory cells, rows, columns,regions, and memory units for purposes of illustration, the number ofmemory cells, rows, columns, regions, and memory units can vary, andcan, in other embodiments, be larger or smaller in scale than shown inthe illustrated examples. For example, in some embodiments, the memorydevice 300 can include only one memory unit 320. Alternatively, thememory device 300 can include two, three, four, eight, ten, or more(e.g., 16, 32, 64, or more) memory units 320. Although the memory units320 are shown in FIG. 3 as including four memory regions 328 each, inother embodiments, each memory unit 320 can include one, two, three,eight, or more (e.g., 16, 32, 64, 100, 128, 256, or more) memoryregions.

In one embodiment, the control circuitry 306 can be provided on the samedie as the main memory 302 (e.g., including command/address/clock inputcircuitry, decoders, voltage and timing generators, input/outputcircuitry, etc.). In another embodiment, the control circuitry 306 canbe a microcontroller, special purpose logic circuitry (e.g., a fieldprogrammable gate array (FPGA), an application specific integratedcircuit (ASIC), control circuitry on a memory die, etc.), or othersuitable processor. In one embodiment, the control circuitry 306 caninclude a processor configured to execute instructions stored in memoryto perform various processes, logic flows, and routines for controllingoperation of the memory device 300, including managing the main memory302 and handling communications between the memory device 300 and thehost device 308. In some embodiments, the control circuitry 306 caninclude embedded memory with memory registers for storing, e.g., memoryaddresses, row counters, bank counters, memory pointers, fetched data,etc. In another embodiment of the present technology, a memory device300 may not include control circuitry, and may instead rely uponexternal control (e.g., provided by the host device 308, or by aprocessor or controller separate from the memory device 300).

The host device 308 can be any one of a number of electronic devicescapable of utilizing memory for the temporary or persistent storage ofinformation, or a component thereof. For example, the host device 308may be a computing device such as a desktop or portable computer, aserver, a hand-held device (e.g., a mobile phone, a tablet, a digitalreader, a digital media player), or some component thereof (e.g., acentral processing unit, a co-processor, a dedicated memory controller,etc.). The host device 308 may be a networking device (e.g., a switch, arouter, etc.) or a recorder of digital images, audio and/or video, avehicle, an appliance, a toy, or any one of a number of other products.In one embodiment, the host device 308 may be connected directly tomemory device 300, although in other embodiments, the host device 308may be indirectly connected to memory device (e.g., over a networkedconnection or through intermediary devices).

In operation, the control circuitry 306 can directly write or otherwiseprogram (e.g., erase) the various memory regions of the main memory 302.The control circuitry 306 communicates with the host device 308 over ahost-device bus or interface 310. In some embodiments, the host device308 and the control circuitry 306 can communicate over a dedicatedmemory bus (e.g., a DRAM bus). In other embodiments, the host device 308and the control circuitry 306 can communicate over a serial interface,such as a serial attached SCSI (SAS), a serial AT attachment (SATA)interface, a peripheral component interconnect express (PCIe), or othersuitable interface (e.g., a parallel interface). The host device 308 cansend various requests (in the form of, e.g., a packet or stream ofpackets) to the control circuitry 306. A request can include a commandto read, write, erase, return information, and/or to perform aparticular operation (e.g., a refresh operation, a TRIM operation, aprecharge operation, an activate operation, a wear-leveling operation, agarbage collection operation, etc.).

In some embodiments, the memory device 300 may receive a commanddirected to a first data set from the host device 308 coupled with thememory device 300. The first data set may refer to external data thatthe host provides (if the command corresponds to a write command) or theexternal data written in the memory array 150 (if the commandcorresponds to a read command). The memory device 300 may generate asecond data set from the first data set, where the second data setincludes one or more bits inverted (e.g., corrupted, poisoned)corresponding to one or more bit locations that the host device hasindicated to the memory device 300 (e.g., via multi-purpose commands,MRW commands, or any command which writes the register 315 of the memorydevice 300). The second data set may refer to the code word generatedbased on the external data (if the command corresponds to a writecommand) or the code word read from the memory array (if the commandcorresponds to the read command). Subsequently, the memory device 300,in conjunction with the on-die ECC circuit, may detect one or moreerrors based on the one or more bits inverted in the second data set.Subsequently, the memory device 300, in conjunction with the on-die ECCcircuit, may correct the one or more errors, thereby generating thefirst data set with the poison removed, and transmit the first data setto the host device. In this manner, the host device 308 may test theon-die ECC circuit to validate (confirm) its functionality, bycontrolling which bits to poison during write operations or readoperations, and receiving the data without the poison from the memorydevice 300.

FIG. 4 is a flow chart 400 illustrating a method of operating a memorydevice in accordance with embodiments of the present technology. Theflow chart 400 may be an example of or include aspects of a method thatthe memory device (e.g., the peripheral circuitry 215, the controlcircuitry 306) may perform as described with reference to FIGS. 1through 3. The flow chart 400 may include aspects of checking on-die ECCfunctionality as described with FIGS. 2A and 2B.

The method includes receiving, at a memory device, a command from a hostdevice coupled with the memory device, the command directed to a firstdata set (box 410). In accordance with one aspect of the presenttechnology, the receiving feature of box 410 can be performed by theperipheral circuitry 215 (or the control circuitry 306), as describedwith reference to FIGS. 2A-2B and 3.

The method further includes generating, from the first data set, asecond data set including one or more bits inverted based on one or morebit locations indicated to the memory device (box 415). In accordancewith one aspect of the present technology, the generating feature of box415 can be performed by the peripheral circuitry 215 (or the controlcircuitry 306), as described with reference to FIGS. 2A-2B and 3.

The method further includes detecting one or more errors in the seconddata set based, at least in part, on the one or more bits inverted (box420). In accordance with one aspect of the present technology, thedetecting feature of box 420 can be performed by the peripheralcircuitry 215 (or the control circuitry 306), in conjunction with theECC circuit 225, as described with reference to FIGS. 2A-2B and 3.

The method further includes correcting the one or more errors in thesecond data set to generate a third data set comprising bits that matchthe first data set (box 425). In accordance with one aspect of thepresent technology, the correcting feature of box 425 can be performedby the peripheral circuitry 215 (or the control circuitry 306), inconjunction with the ECC circuit 225, as described with reference toFIGS. 2A-2B and 3.

The method further includes transmitting, to the host device, the thirddata set generated from the second data set and comprising the bits thatmatch the first data set (box 430). In accordance with one aspect of thepresent technology, the transmitting feature of box 430 can be performedby the peripheral circuitry 215 (or the control circuitry 306), asdescribed with reference to FIGS. 2A-2B and 3.

In some embodiments, one or more registers of the memory device areprogrammed by the host device to include the one or more bit locations,prior to receiving the command. In some embodiments, the one or more bitlocations are indicated to the memory device through one or morecommands to program a register of the memory device transmitted from thehost device to the memory device, prior to receiving the command. Insome embodiments, the command corresponds to a write command providingthe first data set, and generating the second data set from the firstdata set further comprises calculating error correcting code (ECC) checkbits using the first data set, where the second data set includes thefirst data set and the ECC check bits, and inverting the one or morebits of the second data set corresponding to the one or more bitlocations.

In some embodiments, the method can further include writing the seconddata set to a memory array of the memory device, the write commandincluding an address of the memory array to write the second data set.In some embodiments, the method can further include receiving a readcommand from the host device, the read command including the address,and reading, in response to receiving the read command, the second dataset from the memory array, where detecting the one or more errors in thesecond data set corresponds to detecting the one or more errors in thesecond data set read from the memory array.

In some embodiments, the command corresponds to a read command readingthe first data set from a memory array of the memory device, andgenerating the second data set from the first data set further comprisesreading the first data set and a first group of ECC check bits from anaddress of the memory array included in the read command, the firstgroup of ECC check bits calculated using the first data set, andinverting the one or more bits of the first data set and the first groupof ECC check bits read from the memory array, the one or more bitscorresponding to the one or more bit locations, where the second dataset includes the first data set and the first group of ECC check bitswith the one or more bits inverted.

In some embodiments, the method can further include calculating a secondgroup of ECC check bits using the second data set, and comparing thefirst group of ECC check bits with the second group of ECC check bits.In some embodiments, detecting the one or more errors in the second dataset is based, at least in part, on comparing the first group of ECCcheck bits with the second group of ECC check bits.

FIG. 5 is a flow chart 500 illustrating a method of operating a memorydevice in accordance with embodiments of the present technology. Theflow chart 500 may be an example of or include aspects of a method thatthe memory device (e.g., the peripheral circuitry 215, the controlcircuitry 306) may perform as described with reference to FIGS. 1through 3. The flow chart 500 may include aspects of providing poisoneddata for checking system-level ECC functionality as described with FIGS.2C and 2D.

The method includes receiving, at a memory device, a command from a hostdevice coupled with the memory device, the command directed to a firstdata set (box 510). In accordance with one aspect of the presenttechnology, the receiving feature of box 510 can be performed by theperipheral circuitry 215 (or the control circuitry 306), as describedwith reference to FIGS. 2C-2D and 3.

The method further includes inverting one or more bits of the first dataset based on one or more bit locations indicated to the memory device bythe host device using one or more registers of the memory device, one ormore commands to program the one or more registers transmitted to thememory device, or both (box 515). In accordance with one aspect of thepresent technology, the inverting feature of box 515 can be performed bythe peripheral circuitry 215 (or the control circuitry 306), asdescribed with reference to FIGS. 2C-2D and 3.

The method further includes transmitting the first data set with the oneor more bits inverted to the host device (box 520). In accordance withone aspect of the present technology, the transmitting feature of box520 can be performed by the peripheral circuitry 215 (or the controlcircuitry 306), as described with reference to FIGS. 2C-2D and 3.

In some embodiments, the command corresponds to a write commandproviding the first data set, and the method can further includecalculating a group of error correcting code (ECC) check bits using thefirst data set with the one or more bits inverted, and writing the firstdata set with the one or more bits inverted and the group of ECC checkbits to an address of a memory array of the memory device, the writecommand including the address. In some embodiments, the method canfurther include receiving, after writing the first data set with the oneor more bits inverted to the address, a read command from the hostdevice, the read command including the address, and reading, in responseto receiving the read command, the first data set with the one or morebits inverted from the memory array, where transmitting the first dataset with the one or more bits inverted corresponds to transmitting thefirst data set with the one or more bits inverted read from the memoryarray. In some embodiments, the group of ECC check bits is a first groupof ECC check bits, and the method can further include calculating asecond group of ECC check bits using the first data set with the one ormore bits inverted read from the memory array, and comparing the firstgroup of ECC check bits and the second group of ECC check bits, prior totransmitting the first data set with the one or more bits inverted tothe host device.

In some embodiments, the command corresponds to a read command readingthe first data set from a memory array of the memory device, and themethod can further include reading the first data set and a first groupof ECC check bits from an address of the memory array included in theread command, the first group of ECC check bits calculated using thefirst data set, calculating a second group of ECC check bits using thefirst data set read from the memory array, and comparing the first groupof ECC check bits with the second group of ECC check bits. In someembodiments, inverting the one or more bits of the first data setcorresponds to inverting the one or more bits of the first data set readfrom the memory array, after comparing the first group of ECC check bitswith the second group of ECC check bits.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, embodiments from two or more of the methods may becombined.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The devices discussed herein, including a memory device, may be formedon a semiconductor substrate or die, such as silicon, germanium,silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In somecases, the substrate is a semiconductor wafer. In other cases, thesubstrate may be a silicon-on-insulator (SOI) substrate, such assilicon-on-glass (SOG) or silicon-on-sapphire (SOS), or epitaxial layersof semiconductor materials on another substrate. The conductivity of thesubstrate, or sub-regions of the substrate, may be controlled throughdoping using various chemical species including, but not limited to,phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Otherexamples and implementations are within the scope of the disclosure andappended claims. Features implementing functions may also be physicallylocated at various positions, including being distributed such thatportions of functions are implemented at different physical locations.

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. Rather, in the foregoing description, numerousspecific details are discussed to provide a thorough and enablingdescription for embodiments of the present technology. One skilled inthe relevant art, however, will recognize that the disclosure can bepracticed without one or more of the specific details. In otherinstances, well-known structures or operations often associated withmemory systems and devices are not shown, or are not described indetail, to avoid obscuring other aspects of the technology. In general,it should be understood that various other devices, systems, and methodsin addition to those specific embodiments disclosed herein may be withinthe scope of the present technology.

What is claimed is:
 1. A method, comprising: receiving, at a memorydevice, a command from a host device coupled with the memory device, thecommand directed to a first data set; generating, from the first dataset, a second data set including one or more bits inverted based on oneor more bit locations indicated to the memory device; detecting one ormore errors in the second data set based, at least in part, on the oneor more bits inverted; correcting the one or more errors in the seconddata set to generate a third data set comprising bits that match thefirst data set; and transmitting, to the host device, the third data setgenerated from the second data set and comprising the bits that matchthe first data set.
 2. The method of claim 1, wherein one or moreregisters of the memory device are programmed by the host device toinclude the one or more bit locations, prior to receiving the command.3. The method of claim 1, wherein the one or more bit locations areindicated to the memory device through one or more commands to program aregister of the memory device transmitted from the host device to thememory device, prior to receiving the command.
 4. The method of claim 1,wherein the command corresponds to a write command providing the firstdata set, and generating the second data set from the first data setfurther comprises: calculating error correcting code (ECC) check bitsusing the first data set, wherein the second data set includes the firstdata set and the ECC check bits; and inverting the one or more bits ofthe second data set corresponding to the one or more bit locations. 5.The method of claim 4, further comprising: writing the second data setto a memory array of the memory device, the write command including anaddress of the memory array to write the second data set.
 6. The methodof claim 5, further comprising: receiving a read command from the hostdevice, the read command including the address; and reading, in responseto receiving the read command, the second data set from the memoryarray, wherein detecting the one or more errors in the second data setcorresponds to detecting the one or more errors in the second data setread from the memory array.
 7. The method of claim 1, wherein thecommand corresponds to a read command reading the first data set from amemory array of the memory device, and generating the second data setfrom the first data set further comprises: reading the first data setand a first group of ECC check bits from an address of the memory arrayincluded in the read command, the first group of ECC check bitscalculated using the first data set; and inverting the one or more bitsof the first data set and the first group of ECC check bits read fromthe memory array, the one or more bits corresponding to the one or morebit locations, wherein the second data set includes the first data setand the first group of ECC check bits with the one or more bitsinverted.
 8. The method of claim 7, further comprising: calculating asecond group of ECC check bits using the second data set; and comparingthe first group of ECC check bits with the second group of ECC checkbits.
 9. The method of claim 8, wherein detecting the one or more errorsin the second data set is based, at least in part, on comparing thefirst group of ECC check bits with the second group of ECC check bits.10. A method, comprising: receiving, at a memory device, a command froma host device coupled with the memory device, the command directed to afirst data set; inverting one or more bits of the first data set basedon one or more bit locations indicated to the memory device by the hostdevice using one or more registers of the memory device, one or morecommands to program the one or more registers transmitted to the memorydevice, or both; and transmitting the first data set with the one ormore bits inverted to the host device.
 11. The method of claim 10,wherein the command corresponds to a write command providing the firstdata set, the method further comprising: calculating a group of errorcorrecting code (ECC) check bits using the first data set with the oneor more bits inverted; and writing the first data set with the one ormore bits inverted and the group of ECC check bits to an address of amemory array of the memory device, the write command including theaddress.
 12. The method of claim 11, further comprising: receiving,after writing the first data set with the one or more bits inverted tothe address, a read command from the host device, the read commandincluding the address; and reading, in response to receiving the readcommand, the first data set with the one or more bits inverted from thememory array, wherein transmitting the first data set with the one ormore bits inverted corresponds to transmitting the first data set withthe one or more bits inverted read from the memory array.
 13. The methodof claim 12, wherein the group of ECC check bits is a first group of ECCcheck bits, the method further comprising: calculating a second group ofECC check bits using the first data set with the one or more bitsinverted read from the memory array; and comparing the first group ofECC check bits and the second group of ECC check bits, prior totransmitting the first data set with the one or more bits inverted tothe host device.
 14. The method of claim 10, wherein the commandcorresponds to a read command reading the first data set from a memoryarray of the memory device, the method further comprising: reading thefirst data set and a first group of ECC check bits from an address ofthe memory array included in the read command, the first group of ECCcheck bits calculated using the first data set; calculating a secondgroup of ECC check bits using the first data set read from the memoryarray; and comparing the first group of ECC check bits with the secondgroup of ECC check bits.
 15. The method of claim 14, wherein invertingthe one or more bits of the first data set corresponds to inverting theone or more bits of the first data set read from the memory array, aftercomparing the first group of ECC check bits with the second group of ECCcheck bits.
 16. An apparatus, comprising: a memory array; and peripheralcircuitry coupled with the memory array, the peripheral circuitryconfigured to: receive a command from a host device coupled with theapparatus, the command directed to a first data set; generate, from thefirst data set, a second data set including one or more bits invertedbased on one or more bit locations indicated to the apparatus; detectone or more errors in the second data set based, at least in part, onthe one or more bits inverted; correct the one or more errors in thesecond data set to generate a third data set comprising bits that matchthe first data set; and transmitting, to the host device, the third dataset generated from the second data set and comprising the bits thatmatch the first data set.
 17. The apparatus of claim 16, furthercomprising: one or more registers configured to include the one or morebit locations based, at least in part, on an indication from the hostdevice.
 18. The apparatus of claim 16, further comprising: a commanddecoder configured to determine the one or more bit locations based, atleast in part, on one or more commands to program a register of theapparatus transmitted from the host device.
 19. The apparatus of claim16, wherein the peripheral circuitry is further configured to: calculateerror correcting code (ECC) check bits using the first data set providedwith a write command from the host device, wherein the second data setincludes the first data set and the ECC check bits; and invert the oneor more bits of the second data set corresponding to the one or more bitlocations.
 20. The apparatus of claim 16, wherein the peripheralcircuitry is further configured to: read the first data set and a firstgroup of ECC check bits from an address of the memory array included ina read command from the host device, the first group of ECC check bitscalculated using the first data set; and invert the one or more bits ofthe first data set and the first group of ECC check bits read from thememory array, the one or more bits corresponding to the one or more bitlocations, wherein the second data set includes the first data set andthe first group of ECC check bits with the one or more bits inverted.